The DB HiTek SiC process for 1,200-volt power semiconductors has completed reliability qualification on 8-inch wafers.
DB HiTek (KRX: 000990) said in a technology update that it is preparing the silicon-carbide MOSFET process for volume production in 2027.
DB HiTek SiC Process Targets Larger Wafer Economics
Silicon carbide is used in high-temperature and high-voltage applications including electric vehicles, renewable-energy systems and industrial power equipment. Moving from 6-inch to 8-inch wafers can increase the number of devices produced per wafer, although manufacturing yield and cost remain central commercial variables.
The foundry is supplying customers with first- and second-generation process design kits and plans to release a third-generation kit in November. DB HiTek said the kits could shorten customers’ product-development schedules by more than one year.
The second-generation process has a reported specific on-resistance of no more than 2.5 milliohm-square-centimeters and a threshold voltage of at least 3 volts under the stated test conditions. The company is targeting broader customer availability in the second quarter of 2027.
Qualification is an engineering milestone, not evidence of commercial volume, customer orders or profitability. Production readiness and adoption will depend on subsequent manufacturing and customer validation.
