Infineon Technologies (IFNNY) announced that the U.S. International Trade Commission’s final determination confirming Innoscience’s infringement of an Infineon patent related to gallium nitride technology has been upheld following the conclusion of the Presidential Review Period.
The decision results in import and sales bans against Innoscience, according to Infineon, marking a significant outcome in the company’s efforts to protect its intellectual property portfolio in the rapidly growing GaN semiconductor market.
“This decision once again highlights the robustness of Infineon’s intellectual property. It reinforces our commitment to actively protect the company’s patent portfolio and uphold fair competition in the industry,” said Johannes Schoiswohl, senior vice president and head of the GaN Systems business line at the company.
Schoiswohl added that Infineon’s 300-millimeter GaN manufacturing capabilities put the company in a strong position to scale innovation and provide customers with performance, quality and cost advantages.
“With our industry-leading 300-millimeter GaN manufacturing, we are uniquely positioned to scale innovation and deliver the performance, quality, and cost advantages that our customers need to accelerate decarbonization and digitalization,” he said.
GaN technology is increasingly used in power semiconductors due to its efficiency advantages, particularly in applications tied to electrification, data centers, renewable energy and fast-charging systems.
